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8GB DDR3 PC3-14900 - 1866mhz SO DIMM Notebook módulo de memoria - V7149008GBS-LV
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  • 8GB DDR3 PC3-14900 - 1866mhz SO DIMM Notebook módulo de memoria - V7149008GBS-LV

8GB DDR3 PC3-14900 - 1866mhz SO DIMM Notebook módulo de memoria - V7149008GBS-LV

€15.20
Tax included
Reference: V7149008GBS-LV
Brand: V7
Availability: Out-of-Stock Quantity:

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Hasta 2 años
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V7 8GB DDR3 PC3-14900 - 1866mhz SO DIMM Notebook Memory Module - V7149008GBS-LV, 8 GB, 1 x 8 GB, DDR3, 1866 MHz, 204-pin SO-DIMM, BlackUpgrading the memory in your server, desktop or notebook is one the most cost effective ways to boost performance. Memory upgrades are quick and easy to install. Adding extra memory ensures that the operating system and applications run faster and smoother and is essential for applications such as gaming, HD video and image editing, graphic design, multi-tasking and manipulating large amounts of data. Upgrading is also an easy way of extending the life of your system

- 8GB DDR3 1866MHZ Memory Module
- Improve System Performance
- Designed for compatibility with various makes and models of notebook computers
- Easy Installation
- Notebook Memory Module
Features
Internal memory8 GB
Memory layout (modules x size)1 x 8 GB
Internal memory typeDDR3
Memory clock speed1866 MHz
Component forNotebook
Memory form factor204-pin SO-DIMM
Memory voltage1.35 V
Product colourBlack
CertificationCE
Sustainability
Sustainability certificatesRoHS
Packaging data
Package width170 mm
Package depth550 mm
Package height150 mm
Package weight27 g
Logistics data
Harmonized System (HS) code8473302
V7
V7149008GBS-LV

Data sheet

Color del producto
Negro
Ancho del paquete
170 mm
Profundidad del paquete
550 mm
Altura del paquete
150 mm
Certificación
CE
Código de Sistema de Armomización (SA)
84733020
Peso del paquete
27 g
Certificados de sostenibilidad
RoHS
Componente para
Portátil
Velocidad de memoria del reloj
1866 MHz
Memoria interna
8 GB
Diseño de memoria (módulos x tamaño)
1 x 8 GB
Tipo de memoria interna
DDR3
Forma de factor de memoria
204-pin SO-DIMM
Voltaje de memoria
1.35 V
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